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Resumen

 

TEMPERATURE EFFECT ON PHOSPHOROUS EMITTERS MANUFACTURE PROCESS FOR HIGHLY-EFFICIENT SOLAR CELLS

EFECTO DE LA TEMPERATURA DE PROCESO EN LA FABRICACION DE EMISORES DE FOSFORO PARA CELULAS SOLARES DE ALTA EFICIENCIA
Ph.D. Ivaldo Torres Chavéz.
Ph.D. Pablo Ortega.
Ph.D. Oscar Eduardo Gualdron G.

Abstract: This paper deals with the temperature process effect in the manufacture of phosphorus emitters using the technique of a solid source (Planar Dopant Sources) in a furnace of three zones of temperature with a quartz tube and the constant flow of nitrogen (N2). For the manufacture of phosphorus emitters with crystalline silicon wafers (c-Si) type-p was used with 300 mm thick polish on both sides and crystallographic orientation <100>. For the characterization of emitters and to take the sheet resistance value (Rsh) a four-point technique and noninvasive method called Quasy-steady-state photoconductance (QSS-PC) was used with the equipment to measure the lifetime effective curves (teff). With theoretical model of effective lifetime measurement for fittingcurves applied to the above data, the reverse saturation current density (Joe) was extracted. Also, the program was used to simulate solar cell efficiency PC1D and the estimated value of the Voc device with a Sun light intensity.

Resumen: En este trabajo se habla del efecto de la temperatura de proceso en la fabricación de emisores de fósforo usando la técnica de fuente sólida (Planar Dopant Sources) en un horno con tubo de cuarzo de tres zonas de temperatura y flujo constante de Nitrógeno (N2). Para la fabricación de los emisores de fósforo se utilizaron obleas de silicio cristalino (c-Si) tipo p con 300 mm de grosor pulida por ambas caras, con orientación cristalográfica <100>. Para la caracterización de los emisores y obtener la resistencia de cuadro (Rsh) se empleó la técnica de medida a cuatro puntas y el método no invasivo denominado Quasy-steady-state photoconductance (QSS-PC) empleando el equipo Sinton Consulting para medir las curvas de tiempo de vida efectiva (teff ). Con el modelo teórico de tiempos de vida efectiva se ajustaron las curvas y se extrajo el valor de la densidad de corriente de saturación inversa (Joe). También se utilizó el programa de simulación de células solares de alta eficiencia PC1D y se estimó el valor de Voc del dispositivo con una intensidad lumínica de un Sol empleando los valores obtenidos de los emisores fabricados.

Keywords: Diffusion process, Effective Lifetime, Reverse saturation current density, Passivation, Sheet resistances, Phosphorous glass, Phosphorous emitters.