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Resumen

 

THE PROCESS OF TEXTURED PYRAMIDS IN CRYSTALLINE SILICON WAFERS TYPE – P – FOR THE MANUFACTURE OF HIGHLY EFFICIENT SOLAR CELLS

PROCESO DE TEXTURIZACION EN SUBSTRATOS DE SILICIO CRISTALINO TIPO P PARA LA FABRICACION DE CELULAS SOLARES DE ALTO RENDIMIENTO
PhD. Ivaldo Torres Chavez.
PhD. Oscar Eduardo Gualdron Guerrero.

Abstract: This paper deals with the manufacturing process for textured pyramids in crystalline silicon wafers type-p and crystallographic orientation <100> used as a substrate in the manufacturing of high-efficiency solar cells. For the manufacture of the pyramids the solution Tetra Methyl Ammonium Hydroxide (TMAH) with a high pH (> 12) is used combined with Isopropanol (IPA) at a ratio of 2:1. In the manufacturing process a cleansing step was used with the technique of wafer-cleansing with hydrofluoric acid diluted to 2%. The temperature used in the texturing process is 80° C with an etching time between 50 and 60 minutes. The samples were characterized by using the Electronic Scanning Microscopy (SEM) technique to monitor the formation of the pyramids on the surface of the wafer of c-Si with a resolution of 10 KV. The technique TMAH combined with IPA obtains pyramids with 4 to 8 um average size and a 45º inclination.

Resumen: En este trabajo se habla del proceso de fabricación de pirámides para texturizado en obleas de silicio cristalino tipo p con orientación cristalográfica <100> utilizada como substrato en la fabricación de células solares de alta eficiencia. Para la fabricación de las pirámides se utilizo la solución de Tetra Methyl Ammonium Hydroxide (TMAH) con alto nivel de pH (> 12) combinado con Isopropanol (IPA) a una relación de 2:1. En el proceso de fabricación se empleó un paso previo de limpieza utilizando la técnica de wafer-clean utilizando ácido fluorhídrico diluido al 2%. La temperatura utilizada en el proceso de texturización es de 80 ºC con un tiempo de ataque entre 50 y 60 minutos. Las muestras fueron caracterizadas utilizando la técnica de Microscopia Electrónica de Barrido (SEM), para realizar el seguimiento de la formación de las pirámides en la superficie de la oblea de c-Si con una resolución de 10 KV. La técnica de TMAH combinada con el IPA permite obtener pirámides con tamaño promedio de 4 a 8 mm de altura con una inclinación de 45º.

Keywords: Hydrofluoric acid, crystallographic orientation, isopropanol, scanning electron microscopy, tetra methyl ammonium hydroxide, textured pyramids.